| PART |
Description |
Maker |
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BAT15-03W Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz
NPN Silicon RF Transistor
|
Infineon Technologies AG
|
| AT-41486 AT-41486-BLK AT-41486-TR1 AT41486 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AT-41410 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41400 AT-41400-GP4 AT-41400-G |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| Q62702-F655 BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier
16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| UPC1676G-T1 |
1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER 1.2千兆赫带宽，低噪声硅MMIC放大
|
NEC, Corp.
|
| UPC2713T UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC
|
| AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器
GT 8C 2#0 6#12 PIN PLUG
280 GHz GaAs MMIC Low Noise Amplifier
28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc.
Alpha Industries Inc
ALPHA[Alpha Industries]
http://
|
